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  1 data sheet acquired from harris semiconductor schs139d features hysteresis on clock inputs for improved noise immu- nity and increased input rise and fall times asynchronous reset complementary outputs buffered inputs typical f max = 60mhz at v cc = 5v, c l = 15pf, t a = 25 o c fanout (over temperature range) - standard outputs . . . . . . . . . . . . . . . 10 lsttl loads - bus driver outputs . . . . . . . . . . . . . 15 lsttl loads wide operating temperature range . . . -55 o c to 125 o c balanced propagation delay and transition times signi?ant power reduction compared to lsttl logic ics hc types - 2v to 6v operation - high noise immunity: n il = 30%, n ih = 30% of v cc at v cc = 5v hct types - 4.5v to 5.5v operation - direct lsttl input logic compatibility, v il = 0.8v (max), v ih = 2v (min) - cmos input compatibility, i l 1 a at v ol , v oh description the ?c107 and cd74hct107 utilize silicon gate cmos technology to achieve operating speeds equivalent to lsttl parts. they exhibit the low power consumption of standard cmos integrated circuits, together with the ability to drive 10 lsttl loads. these ?p-?ps have independent j, k, reset and clock inputs and q and q outputs. they change state on the negative-going transition of the clock pulse. reset is accomplished asynchronously by a low level input. this device is functionally identical to the hc/hct73 but differs in terminal assignment and in some parametric limits. the hct logic family is functionally as well as pin compatible with the standard ls family. pinout cd54hc107 (cerdip) cd74hc107 (pdip, soic) cd74hct107 (pdip) top view ordering information part number temp. range ( o c) package cd54hc107f3a -55 to 125 14 ld cerdip cd74hc107e -55 to 125 14 ld pdip cd74hc107m -55 to 125 14 ld soic cd74hc107mt -55 to 125 14 ld soic cd74hc107m96 -55 to 125 14 ld soic CD74HCT107E -55 to 125 14 ld pdip note: when ordering, use the entire part number. the suf? 96 denotes tape and reel. the suf? t denotes a small-quantity reel of 250. 1j 1q 1q 1k 2q 2q gnd v cc 1r 1cp 2k 2r 2cp 2j 1 2 3 4 5 6 7 14 13 12 11 10 9 8 march 1998 - revised october 2003 caution: these devices are sensitive to electrostatic discharge. users should follow proper ic handling procedures. copyright 2003, texas instruments incorporated cd54hc107, cd74hc107, cd74hct107 dual j-k flip-flop with reset negative-edge trigger [ /title ( cd74 h c107 , c d74 h ct10 7 ) / sub- j ect ( dual j -k f lip- f lop w ith r eset n ega- t ive-
2 functional diagram logic diagram truth table inputs outputs r cp j k q q lxxxlh h l l no change h hlhl h lhlh h h h toggle h h x x no change h= high level (steady state) l= low level (steady state) x= irrelevant = high-to-low transition 2 r 3 2 1 q 1q 10 13 1 r 2k 11 9 5 6 2 q 2q 2 cp ff 1 ff 2 gnd = 7 v cc = 14 2j 8 1k 4 12 1 cp 1j 1 na j k cl cl r 3 (5) q 2 (6) q 1 (8) 4(11) j k 12 (9) cp 13 (10) r cd54hc107, cd74hc107, cd74hct107
3 absolute maximum ratings thermal information dc supply voltage, v cc . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to 7v dc input diode current, i ik for v i < -0.5v or v i > v cc + 0.5v . . . . . . . . . . . . . . . . . . . . . . 20ma dc drain current, per output, i o for -0.5v < v o < v cc + 0.5v . . . . . . . . . . . . . . . . . . . . . . . . . . 25ma dc output diode current, i ok for v o < -0.5v or v o > v cc + 0.5v . . . . . . . . . . . . . . . . . . . . 20ma dc output source or sink current per output pin, i o for v o > -0.5v or v o < v cc + 0.5v . . . . . . . . . . . . . . . . . . . . 25ma dc v cc or ground current, i cc . . . . . . . . . . . . . . . . . . . . . . . . . 50ma operating conditions temperature range, t a . . . . . . . . . . . . . . . . . . . . . . -55 o c to 125 o c supply voltage range, v cc hc types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2v to 6v hct types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5v to 5.5v dc input or output voltage, v i , v o . . . . . . . . . . . . . . . . . 0v to v cc input rise and fall time 2v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (max) 4.5v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (max) 6v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (max) thermal resistance (typical, note 1) ja ( o c/w) e (pdip) package . . . . . . . . . . . . . . . . . . . . . . . . . . 80 m (soic) package. . . . . . . . . . . . . . . . . . . . . . . . . . 86 maximum junction temperature (hermetic package or die) . . . 175 o c maximum junction temperature (plastic package) . . . . . . . . 150 o c maximum storage temperature range . . . . . . . . . .-65 o c to 150 o c maximum lead temperature (soldering 10s) . . . . . . . . . . . . . 300 o c (soic - lead tips only) caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not im plied. note: 1. the package thermal impedance is calculated in accordance with jesd 51-7. dc electrical speci?ations parameter symbol test conditions v cc (v) 25 o c -40 o c to 85 o c -55 o c to 125 o c units v i (v) i o (ma) min typ max min max min max hc types high level input voltage v ih - - 2 1.5 - - 1.5 - 1.5 - v 4.5 3.15 - - 3.15 - 3.15 - v 6 4.2 - - 4.2 - 4.2 - v low level input voltage v il - - 2 - - 0.5 - 0.5 - 0.5 v 4.5 - - 1.35 - 1.35 - 1.35 v 6 - - 1.8 - 1.8 - 1.8 v high level output voltage cmos loads v oh v ih or v il -0.02 2 1.9 - - 1.9 - 1.9 - v -0.02 4.5 4.4 - - 4.4 - 4.4 - v -0.02 6 5.9 - - 5.9 - 5.9 - v high level output voltage ttl loads ---------v -4 4.5 3.98 - - 3.84 - 3.7 - v -5.2 6 5.48 - - 5.34 - 5.2 - v low level output voltage cmos loads v ol v ih or v il 0.02 2 - - 0.1 - 0.1 - 0.1 v 0.02 4.5 - - 0.1 - 0.1 - 0.1 v 0.02 6 - - 0.1 - 0.1 - 0.1 v low level output voltage ttl loads ---------v 4 4.5 - - 0.26 - 0.33 - 0.4 v 5.2 6 - - 0.26 - 0.33 - 0.4 v input leakage current i i v cc or gnd -6-- 0.1 - 1- 1 a cd54hc107, cd74hc107, cd74hct107
4 quiescent device current i cc v cc or gnd 0 6 - - 4 - 40 - 80 a hct types high level input voltage v ih - - 4.5 to 5.5 2- - 2 - 2 - v low level input voltage v il - - 4.5 to 5.5 - - 0.8 - 0.8 - 0.8 v high level output voltage cmos load v oh v ih or v il -0.02 4.5 4.4 - - 4.4 - 4.4 - v high level output voltage ttl loads -4 4.5 3.98 - - 3.84 - 3.7 - v low level output voltage cmos loads v ol v ih or v il 0.02 4.5 - - 0.1 - 0.1 - 0.1 v low level output voltage ttl loads 4 4.5 - - 0.26 - 0.33 - 0.4 v input leakage current i i v cc and gnd - 5.5 - 0.1 - 1- 1 a quiescent device current i cc v cc or gnd 0 5.5 - - 4 - 40 - 80 a additional quiescent device current per input pin: 1 unit load ? i cc (note 2) v cc - 2.1 - 4.5 to 5.5 - 100 360 - 450 - 490 a note: 2. for dual-supply systems theoretical worst case (v i = 2.4v, v cc = 5.5v) specification is 1.8ma. dc electrical speci?ations (continued) parameter symbol test conditions v cc (v) 25 o c -40 o c to 85 o c -55 o c to 125 o c units v i (v) i o (ma) min typ max min max min max hct input loading table input unit loads all 0.3 note: unit load is ? i cc limit speci?d in dc electrical speci?a- tions table, e.g., 360 a max at 25 o c. prerequisite for switching speci?ations parameter symbol test conditions v cc (v) 25 o c -40 o c to 85 o c -55 o c to 125 o c units min typ max min max min max hc types cp pulse width t w - 2 80 - - 100 - 120 - ns 4.5 16 - - 20 - 24 - ns 6 14 - - 17 - 20 - ns r pulse width t w - 2 80 - - 100 - 120 - ns 4.5 16 - - 20 - 24 - ns 6 14 - - 17 - 20 - ns cd54hc107, cd74hc107, cd74hct107
5 setup time, j, k to cp t su - 2 100 - - 125 - 150 - ns 4.5 20 - - 25 - 30 - ns 6 17 - - 21 - 26 - ns hold time, j, k to cp t h -23--3-3-ns 4.5 3 - - 3 - 3 - ns 63--3-3-ns removal time t rem - 2 60 - - 75 - 90 - ns 4.5 12 - - 15 - 18 - ns 6 10 - - 13 - 15 - ns cp frequency f max - 2 6 - - 5 - 4 - mhz 4.5 30 - - 25 - 20 - mhz 6 35 - - 29 - 23 - mhz hct types cp pulse width t w - 4.5 18 - - 23 - 27 - ns r pulse width t w - 4.5 24 - - 30 - 36 - ns setup time, j, k to cp t su - 4.5 20 - - 25 - 30 - ns hold time, j, k to cp t h - 4.5 5 - - 5 - 5 - ns removal time t rem - 4.5 12 - - 15 - 18 - ns cp frequency f max - 4.5 28 - - 22 - 19 - mhz switching speci?ations input t r , t f = 6ns parameter symbol test conditions v cc (v) 25 o c -40 o c to 85 o c -55 o c to 125 o c units min typ max min max min max hc types propagation delay, cp to q t plh , t phl c l = 50pf 2 - - 170 - 215 - 255 ns 4.5 - - 34 - 43 - 51 ns c l = 15pf 5 - 14 - ----ns c l = 50pf 6 - - 29 - 37 - 43 ns propagation delay, cp to q t plh , t phl c l = 50pf 2 - - 170 - 215 - 255 ns 4.5 - - 34 - 43 - 51 ns c l = 15pf 5 - 14 - ----ns c l = 50pf 6 - - 29 - 37 - 43 ns propagation delay, r to q, q t plh , t phl c l = 50pf 2 - - 155 - 195 - 235 ns 4.5 - - 31 - 39 - 47 ns c l = 15pf 5 - 13 - ----ns c l = 50pf 6 - - 26 - 33 - 40 ns output transition time t tlh , t thl c l = 50pf 2 - - 75 - 95 18 110 ns 4.5 - - 15 - 19 - 22 ns 6 - - 13 - 16 - 19 ns input capacitance c i - - - - 10 - 10 - 10 pf cp frequency f max c l = 15pf 5 - 60 - ----mhz prerequisite for switching speci?ations (continued) parameter symbol test conditions v cc (v) 25 o c -40 o c to 85 o c -55 o c to 125 o c units min typ max min max min max cd54hc107, cd74hc107, cd74hct107
6 power dissipation capacitance (notes 3, 4) c pd - 5-31-----pf hct types propagation delay, cp to q t plh , t phl c l = 50pf 4.5 - - 43 - 54 - 65 ns c l = 15pf 5 - 18 - ----ns propagation delay, cp to q t plh , t phl cl = 50pf 4.5 - - 40 - 50 - 60 ns c l = 15pf 5 - 17 - ----ns propagation delay, r to q, q t plh , t phl cl = 50pf 4.5 - - 38 - 48 - 57 ns c l = 15pf 5 - 16 - ----ns output transition time t tlh , t thl c l = 50pf 4.5 - - 15 - 19 - 22 ns input capacitance c i - - - - 10 - 10 - 10 pf cp frequency f max c l = 15pf 5 - 56 - ----mhz power dissipation capacitance (notes 3, 4) c pd - 5-30-----pf notes: 3. c pd is used to determine the dynamic power consumption, per flip-flop. 4. p d =c pd v cc 2 f i + c l v cc 2 f o where f i = input frequency, f o = output frequency, c l = output load capacitance, v cc = supply voltage. switching speci?ations input t r , t f = 6ns (continued) parameter symbol test conditions v cc (v) 25 o c -40 o c to 85 o c -55 o c to 125 o c units min typ max min max min max test circuits and waveforms note: outputs should be switching from 10% v cc to 90% v cc in accordance with device truth table. for f max , input duty cycle = 50%. figure 1. hc clock pulse rise and fall times and pulse width note: outputs should be switching from 10% v cc to 90% v cc in accordance with device truth table. for f max , input duty cycle = 50%. figure 2. hct clock pulse rise and fall times and pulse width figure 3. hc and hcu transition times and propaga- tion delay times, combination logic figure 4. hct transition times and propagation delay times, combination logic clock 90% 50% 10% gnd v cc t r c l t f c l 50% 50% t wl t wh 10% t wl + t wh = f cl i clock 2.7v 1.3v 0.3v gnd 3v t r c l = 6ns t f c l = 6ns 1.3v 1.3v t wl t wh 0.3v t wl + t wh = fc l i t phl t plh t thl t tlh 90% 50% 10% 50% 10% inverting output input gnd v cc t r = 6ns t f = 6ns 90% t phl t plh t thl t tlh 2.7v 1.3v 0.3v 1.3v 10% inverting output input gnd 3v t r = 6ns t f = 6ns 90% cd54hc107, cd74hc107, cd74hct107
7 figure 5. hc setup times, hold times, removal time, and propagation delay times for edge triggered sequential logic circuits figure 6. hct setup times, hold times, removal time, and propagation delay times for edge triggered sequential logic circuits test circuits and waveforms (continued) t r c l t f c l gnd v cc gnd v cc 50% 90% 10% gnd clock input data input output set, reset or preset v cc 50% 50% 90% 10% 50% 90% t rem t plh t su(h) t tlh t thl t h(l) t phl ic c l 50pf t su(l) t h(h) t r c l t f c l gnd 3v gnd 3v 1.3v 2.7v 0.3v gnd clock input data input output set, reset or preset 3v 1.3v 1.3v 1.3v 90% 10% 1.3v 90% t rem t plh t su(h) t tlh t thl t h(l) t phl ic c l 50pf t su(l) 1.3v t h(h) 1.3v cd54hc107, cd74hc107, cd74hct107



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